WebApr 5, 2024 · After years of research, InAs/GaAs QD-based lasers have eventually shown performance superior to their quantum well counterparts in terms of lower threshold … WebNov 1, 2024 · We report on the electron mobility of an inverted and a non-inverted type II InAs/GaSb quantum well (QW) structures. The smaller mobility is attributed to larger electron effective mass in the inverted QW. Larger electron effective mass may caused by the mixing between the conduction and valence band in the inverted QW.
Magneto-transport in InAs/AlSb quantum wells with large electron ...
WebFeb 23, 2024 · The mode-locking and noise characteristics of InP/InAs quantum dash (QDash) and quantum dot (QDot) ... On the other hand, the QDot lasers show higher quality repetition frequency tunability with higher internal quantum efficiency, as well as lower average integrated relative intensity noise (RIN) and average optical linewidth. … WebQuantum wells in InAs/GaSb heterostructures can be tuned to a topological regime associated with the quantum spin Hall effect, which arises due to an inverted band gap and hybridized electron... termite history in az
Large g-factor enhancement in high-mobility InAs/AlSb quantum …
WebDec 14, 2016 · Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. WebMay 11, 2015 · The InAs/GaSb quantum wells were grown using molecular beam epitaxy on n + (001) GaAs substrates. Two different material batches were used: a batch grown using high-mobility Ga (HM) and a batch ... WebDec 3, 2024 · An InP-based metamorphic InAs quantum well laser has been demonstrated on an In0.8Al0.2As template with electrically pumped lasing up to 3 μm at room … tricitystate